Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

(2009) Hongping Zhao et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Type-II InGaN-GaNAs quantum wells for lasers applications

(2008) Ronald A. Arif et al.   APPLIED PHYSICS LETTERS

Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

(2008) Ronald A Arif et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

(2008) Hongping Zhao et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers

(2008) Hongping Zhao et al.   JOURNAL OF APPLIED PHYSICS

Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm

(2008) Hongping Zhao et al.   OPTICAL AND QUANTUM ELECTRONICS