LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

Organic Light-Emitting Devices for Solid-State Lighting

(2011) Franky So et al.   MRS BULLETIN

Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes

(2008) Hisashi Yamada et al.   Applied Physics Express

Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films

(2008) Qiming Li et al.   APPLIED PHYSICS LETTERS

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

(2008) Hitoshi Sato et al.   APPLIED PHYSICS LETTERS

n-InGaN∕p-GaN single heterostructure light emitting diode with p-side down

(2008) M. L. Reed et al.   APPLIED PHYSICS LETTERS

Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal

(2008) Min-Ki Kwon et al.   APPLIED PHYSICS LETTERS

GaN∕InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

(2008) Aurélien David et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

(2008) K. McGroddy et al.   APPLIED PHYSICS LETTERS

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

(2008) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

Control of stress and crystalline quality in GaInN films used for green emitters

(2008) Motoaki Iwaya et al.   JOURNAL OF CRYSTAL GROWTH

Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature

(2008) Hisashi Masui et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Localized surface plasmon-induced emission enhancement of a green light-emitting diode

(2008) Dong-Ming Yeh et al.   NANOTECHNOLOGY

High-quality nonpolarm-plane GaN substrates grown by HVPE

(2008) Kenji Fujito et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

m -plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE

(2008) H. Behmenburg et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS