Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
Published 2010 View Full Article
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Title
Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 11, Pages 112105
Publisher
AIP Publishing
Online
2010-09-16
DOI
10.1063/1.3489086
References
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Related references
Note: Only part of the references are listed.- Optical gain characteristics of staggered InGaN quantum wells lasers
- (2010) Hongping Zhao et al. JOURNAL OF APPLIED PHYSICS
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- Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
- (2009) Hongping Zhao et al. APPLIED PHYSICS LETTERS
- 500 nm electrically driven InGaN based laser diodes
- (2009) Désirée Queren et al. APPLIED PHYSICS LETTERS
- Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm
- (2009) Hongping Zhao et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses
- (2009) Yik-Khoon Ee et al. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Thermoelectric Properties of In0.3Ga0.7N Alloys
- (2009) B. N. Pantha et al. JOURNAL OF ELECTRONIC MATERIALS
- Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
- (2009) Yik-Khoon Ee et al. OPTICS EXPRESS
- High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
- (2008) Carl J. Neufeld et al. APPLIED PHYSICS LETTERS
- Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
- (2008) K. McGroddy et al. APPLIED PHYSICS LETTERS
- Thermoelectric properties of InxGa1−xN alloys
- (2008) B. N. Pantha et al. APPLIED PHYSICS LETTERS
- Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
- (2008) Ronald A Arif et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates
- (2008) Muhammad Jamil et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode
- (2008) Muhammad Jamil et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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