In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface

Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach

(2016) Daniela Carta et al.   ACS Applied Materials & Interfaces

Nanoscale electrochemistry using dielectric thin films as solid electrolytes

(2016) Ilia Valov et al.   Nanoscale

Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures

(2015) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

(2015) Michael Lübben et al.   ADVANCED MATERIALS

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Switching of Cu/MoO x /TiN CBRAM at MoO x /TiN interface

(2015) Masashi Arita et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electrochemical processes and device improvement in conductive bridge RAM cells

(2015) Ludovic Goux et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

(2015) Kyungjoon Baek et al.   NPG Asia Materials

Electronic system with memristive synapses for pattern recognition

(2015) Sangsu Park et al.   Scientific Reports

Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

(2014) Anja Herpers et al.   ADVANCED MATERIALS

Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions

(2014) Evgeny Mikheev et al.   Nature Communications

Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate

(2013) Chi-Hsin Huang et al.   ACS Applied Materials & Interfaces

Chemical insight into electroforming of resistive switching manganite heterostructures

(2013) Francesco Borgatti et al.   Nanoscale

Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

(2013) Ilia Valov   ChemElectroChem

Electron Transfer and Ionic Displacements at the Origin of the 2D Electron Gas at the LAO/STO Interface: Direct Measurements with Atomic-Column Spatial Resolution

(2012) Claudia Cantoni et al.   ADVANCED MATERIALS

Evidence for electric-field-driven migration and diffusion of oxygen vacancies in Pr0.7Ca0.3MnO3

(2012) Zhaoliang Liao et al.   JOURNAL OF APPLIED PHYSICS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

(2010) June Sik Kwak et al.   APPLIED PHYSICS LETTERS

Interfacial chemical states of resistance-switching metal/Pr0.7Ca0.3MnO3 interfaces

(2010) R. Yasuhara et al.   APPLIED PHYSICS LETTERS

Electrochemical oxidation behavior of titanium nitride based electrocatalysts under PEM fuel cell conditions

(2010) Bharat Avasarala et al.   ELECTROCHIMICA ACTA

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Atomic-resolution spectroscopic imaging of oxide interfaces

(2010) L. Fitting Kourkoutis et al.   PHILOSOPHICAL MAGAZINE

Interfacial resistive switching properties in Ti/La0.7Ca0.3MnO3/Pt sandwich structures

(2010) X. J. Liu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices

(2009) Z. L. Liao et al.   APPLIED PHYSICS LETTERS

Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes

(2009) Song-Lin Li et al.   JOURNAL OF APPLIED PHYSICS

Structural and chemical characterization of TiO2memristive devices by spatially-resolved NEXAFS

(2009) John Paul Strachan et al.   NANOTECHNOLOGY

Changing the physical and chemical properties of titanium oxynitridesTiN1−xOxby changing the composition

(2009) Jesús Graciani et al.   PHYSICAL REVIEW B

Electronic and crystal-field effects in the fine structure of electron energy-loss spectra of manganites

(2009) Weidong Luo et al.   PHYSICAL REVIEW B

Relationship between resistive switching characteristics and band diagrams ofTi/Pr1−xCaxMnO3junctions

(2009) S. Asanuma et al.   PHYSICAL REVIEW B

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Keiji Shono et al.   Applied Physics Express

Enhancement of Switching Capability on Bipolar Resistance Switching Device with Ta/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Hiroyasu Kawano et al.   Applied Physics Express

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

Electric pulse induced resistance change effect in manganites due to polaron localization at the metal-oxide interfacial region

(2008) Ch. Jooss et al.   PHYSICAL REVIEW B