32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

(2012) Jong Ho Lee et al.   APPLIED PHYSICS LETTERS

Schottky diode with excellent performance for large integration density of crossbar resistive memory

(2012) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

Engineering nonlinearity into memristors for passive crossbar applications

(2012) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Frequency dependent dynamical electromechanical response of mixed ionic-electronic conductors

(2012) A. N. Morozovska et al.   JOURNAL OF APPLIED PHYSICS

Metal oxide memories based on thermochemical and valence change mechanisms

(2012) J. Joshua Yang et al.   MRS BULLETIN

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

(2012) Matthew D Pickett et al.   NANOTECHNOLOGY

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

(2011) Seo Hyoung Chang et al.   ADVANCED MATERIALS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

(2011) Gun Hwan Kim et al.   APPLIED PHYSICS LETTERS

A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications

(2011) Kuk-Hwan Kim et al.   NANO LETTERS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

(2010) J. Joshua Yang et al.   ADVANCED MATERIALS

Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell

(2010) Seul Ji Song et al.   APPLIED PHYSICS LETTERS

High switching endurance in TaOx memristive devices

(2010) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

(2010) Gun Hwan Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

(2010) Woo Young Park et al.   NANOTECHNOLOGY

A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

(2010) Gun Hwan Kim et al.   NANOTECHNOLOGY

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants

(2009) Gyu-Jin Choi et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

(In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array

(2008) Yong Cheol Shin et al.   APPLIED PHYSICS LETTERS

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

(2008) N. Huby et al.   MICROELECTRONIC ENGINEERING

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE