256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

Title
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
Authors
Keywords
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Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 52, Issue 1, Pages 210-217
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2016-10-25
DOI
10.1109/jssc.2016.2604297

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