Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors

Vertical MoS2 transistors with sub-1-nm gate lengths

(2022) Fan Wu et al.   NATURE

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

(2022) Suraj S. Cheema et al.   NATURE

Promises and prospects of two-dimensional transistors

(2021) Yuan Liu et al.   NATURE

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

(2021) Theresia Knobloch et al.   Nature Electronics

Ultralow contact resistance between semimetal and monolayer semiconductors

(2021) Pin-Chun Shen et al.   NATURE

Direct observation of ultrafast hydrogen bond strengthening in liquid water

(2021) Jie Yang et al.   NATURE

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

(2021) Taotao Li et al.   Nature Nanotechnology

VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code

(2021) Vei Wang et al.   COMPUTER PHYSICS COMMUNICATIONS

A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film

(2021) Kailang Liu et al.   Nature Electronics

Transistors based on two-dimensional materials for future integrated circuits

(2021) Saptarshi Das et al.   Nature Electronics

Insulators for 2D nanoelectronics: the gap to bridge

(2020) Yury Yu. Illarionov et al.   Nature Communications

Graphene and two-dimensional materials for silicon technology

(2019) Deji Akinwande et al.   NATURE

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates

(2018) Yibo Zhu et al.   NANO LETTERS

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

(2017) Kai Xu et al.   NANO LETTERS

Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine

(2016) Jun Hong Park et al.   ACS Nano

Buffer layer engineering on graphene via various oxidation methods for atomic layer deposition

(2016) Nobuaki Takahashi et al.   Applied Physics Express

Enhanced Nucleation of High-k Dielectrics on Graphene by Atomic Layer Deposition

(2016) Yong Hyun Park et al.   CHEMISTRY OF MATERIALS

A comparison of empirical potentials for sliding simulations of MoS 2

(2016) Paolo Nicolini et al.   COMPUTATIONAL MATERIALS SCIENCE

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

(2015) Jingli Wang et al.   Small

Improvement of Al2O3 Films on Graphene Grown by Atomic Layer Deposition with Pre-H2O Treatment

(2014) Li Zheng et al.   ACS Applied Materials & Interfaces

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Effects of interface state density on 4H-SiC n-channel field-effect mobility

(2014)   APPLIED PHYSICS LETTERS

Electronics based on two-dimensional materials

(2014) Gianluca Fiori et al.   Nature Nanotechnology

Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers

(2013) Vinod K. Sangwan et al.   NANO LETTERS

Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

(2012) Srikar Jandhyala et al.   ACS Nano

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor

(2011) Huilong Xu et al.   ACS Nano

Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-Assembled Monolayers

(2011) Justice M. P. Alaboson et al.   ACS Nano

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors

(2011) Osama M. Nayfeh et al.   IEEE ELECTRON DEVICE LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

MD simulations of molybdenum disulphide (MoS2): Force-field parameterization and thermal transport behavior

(2010) Vikas Varshney et al.   COMPUTATIONAL MATERIALS SCIENCE

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

(2010) Stefan Grimme et al.   JOURNAL OF CHEMICAL PHYSICS

A grid-based Bader analysis algorithm without lattice bias

(2009) W Tang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Visualization and analysis of atomistic simulation data with OVITO–the Open Visualization Tool

(2009) Alexander Stukowski   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING