Effects of interface state density on 4H-SiC n-channel field-effect mobility

Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

(2013) Yuichiro Nanen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

(2012) Mitsuo Okamoto et al.   Applied Physics Express

Generation of very fast states by nitridation of the SiO2/SiC interface

(2012) Hironori Yoshioka et al.   JOURNAL OF APPLIED PHYSICS

Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

(2012) Hironori Yoshioka et al.   JOURNAL OF APPLIED PHYSICS

Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

(2010) Dai Okamoto et al.   APPLIED PHYSICS LETTERS

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

(2010) Dai Okamoto et al.   IEEE ELECTRON DEVICE LETTERS

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

(2010) S. Dhar et al.   JOURNAL OF APPLIED PHYSICS

Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel

(2010) A. Poggi et al.   JOURNAL OF APPLIED PHYSICS

The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes

(2008) Y. Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES