Journal
APPLIED PHYSICS EXPRESS
Volume 9, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.125101
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Funding
- JSPS KAKENHI Grant [JP25107004, JP16H04343, JP16K14446]
- JSPS Core-to-Core Program, A. Advanced Research Networks
- Grants-in-Aid for Scientific Research [16H04343, 16K14446, 25107004] Funding Source: KAKEN
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The integration of a high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to its highest oxidation ability among the rare-earth elements, and various oxidation methods (atmospheric, and high-pressure O-2 and ozone annealing) were applied to the Y metal buffer layer. By optimizing the oxidation conditions of the top-gate insulator, we successfully improved the capacitance of the top gate Y2O3 insulator and demonstrated a large Ion/Ioff ratio for bilayer graphene under an external electric field. (C) 2016 The Japan Society of Applied Physics
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