Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

2D III‐Nitride Materials: Properties, Growth, and Applications

(2021) Jianwei Ben et al.   ADVANCED MATERIALS

High electron mobility in nearly-dislocation-free hexagonal InN

(2021) Ling Chen et al.   Applied Physics Express

Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

(2021) Z. Benzarti et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Interlayer of PMMA Doped with Au Nanoparticles for High-Performance Tandem Photodetectors: A Solution to Suppress Dark Current and Maintain High Photocurrent

(2020) Muhammad Sulaman et al.   ACS Applied Materials & Interfaces

Kinetically stabilized high-temperature InN growth

(2020) G. Brendan Cross et al.   JOURNAL OF CRYSTAL GROWTH

High-performance solution-processed colloidal quantum dots-based tandem broadband photodetectors with dielectric interlayer

(2019) Muhammad Sulaman et al.   NANOTECHNOLOGY

High-electron-mobility InN epilayers grown on silicon substrate

(2018) Huapeng Liu et al.   APPLIED PHYSICS LETTERS

Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

(2018) J. Mickevičius et al.   APPLIED SURFACE SCIENCE

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

(2018) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

Structural, Electrical and Optical Properties of Sputtered-Grown InN Films on ZnO Buffered Silicon, Bulk GaN, Quartz and Sapphire Substrates

(2018) Umar Bashir et al.   JOURNAL OF ELECTRONIC MATERIALS

Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

(2018) Xiantong Zheng et al.   SUPERLATTICES AND MICROSTRUCTURES

Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors

(2018) Mani Azadmand et al.   Scientific Reports

A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering

(2017) Umar Bashir et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer

(2017) Umar Bashir et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Enhanced performance of solution-processed broadband photodiodes by epitaxially blending MAPbBr3 quantum dots and ternary PbSxSe1−x quantum dots as the active layer

(2017) Muhammad Sulaman et al.   NANOTECHNOLOGY

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition

(2017) Atsushi Kobayashi et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Effects of substrate pre-nitridation and post-nitridation processes on InN quantum dots with crystallinity by droplet epitaxy

(2017) Hugo Juin-Yu Chen et al.   SURFACE & COATINGS TECHNOLOGY

Rotation of in-plane structural anisotropy at the interface of an a-plane InN/GaN heterostructure grown by MOCVD on r-plane sapphire

(2016) H. F. Liu et al.   CRYSTENGCOMM

Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates

(2016) Kenichi Ishii et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

(2015) Rie Togashi et al.   JOURNAL OF CRYSTAL GROWTH

Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

(2015) Ju-Hyung Ha et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

(2015) Ichiro Yonenaga et al.   AIP Advances

Geometric treatment of conduction electron scattering by crystal lattice strains and dislocations

(2014) Koushik Viswanathan et al.   JOURNAL OF APPLIED PHYSICS

Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films

(2013) Yuewei Zhang et al.   Applied Physics Express

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Atomic scale modeling of edgea-type dislocations in InN

(2012) Joseph Kioseoglou   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Effect of substrate temperature on structural and optical properties of InN epilayer grown on GaN template

(2012) Wei-Chun Chen et al.   THIN SOLID FILMS

Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN

(2011) Nate Miller et al.   PHYSICAL REVIEW B

Strain relaxation in high Ge content SiGe layers deposited on Si

(2010) G. Capellini et al.   JOURNAL OF APPLIED PHYSICS

Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy

(2009) Tomohiro Yamaguchi et al.   Applied Physics Express

Free electron behavior in InN: On the role of dislocations and surface electron accumulation

(2009) V. Darakchieva et al.   APPLIED PHYSICS LETTERS

The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN

(2009) Chad S. Gallinat et al.   APPLIED PHYSICS LETTERS

Electron-carrier generation by edge dislocations in InN films: First-principles study

(2009) Y. Takei et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of InN epilayers grown on Si(111) substrates at various temperatures by MBE

(2009) Yan-Hsin Wang et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Sources of unintentional conductivity in InN

(2008) Anderson Janotti et al.   APPLIED PHYSICS LETTERS