High electron mobility in nearly-dislocation-free hexagonal InN

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

(2019) Ha Quoc Thang Bui et al.   Micromachines

Liquid Phase Epitaxy of Gallium Nitride

(2019) Daniel F. Jaramillo-Cabanzo et al.   CRYSTAL GROWTH & DESIGN

High-electron-mobility InN epilayers grown on silicon substrate

(2018) Huapeng Liu et al.   APPLIED PHYSICS LETTERS

Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

(2018) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

High-quality InN films on GaN using graded InGaN buffers by MBE

(2016) SM Islam et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

(2016) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires

(2016) Ping Wang et al.   NANO LETTERS

Probing the electrical transport properties of intrinsic InN nanowires

(2013) S. Zhao et al.   APPLIED PHYSICS LETTERS

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

InGaN Solar Cells: Present State of the Art and Important Challenges

(2012) Ashraful Ghani Bhuiyan et al.   IEEE Journal of Photovoltaics

Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements

(2011) N. Ma et al.   APPLIED PHYSICS LETTERS

Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN

(2011) Nate Miller et al.   PHYSICAL REVIEW B

Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

(2010)   APPLIED PHYSICS LETTERS

Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy

(2009) Tomohiro Yamaguchi et al.   Applied Physics Express

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS