Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition

Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

(2014) Eiji Nakamura et al.   APPLIED PHYSICS LETTERS

Field-effect transistors based on cubic indium nitride

(2014) Masaaki Oseki et al.   Scientific Reports

P-type InGaN across the entire alloy composition range

(2013) K. Wang et al.   APPLIED PHYSICS LETTERS

Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers

(2013) Kana Okubo et al.   APPLIED PHYSICS LETTERS

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Growth and characterizations of semipolar (112¯2) InN

(2012) Duc V. Dinh et al.   JOURNAL OF APPLIED PHYSICS

Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

(2012) Atsushi Kobayashi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates

(2010) Tomoaki Fujii et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of semi-polar InN layer on GaAs (110) surface by MOVPE

(2010) Hisashi Murakami et al.   JOURNAL OF CRYSTAL GROWTH

Structural characteristics of semipolar InN (112l) films grown on yttria stabilized zirconia substrates

(2010) Tomoaki Fujii et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Growth of semipolar (10$ \bar 1\bar 3 $) InN on m -plane sapphire using MOVPE

(2010) Duc V. Dinh et al.   Physica Status Solidi-Rapid Research Letters

Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

(2009) Kazuhiro Sato et al.   Applied Physics Express

Growth and characterization of crack-free semipolar {1-101}InGaN∕GaN multiple-quantum well on V-grooved (001)Si substrates

(2008) Guan-Ting Chen et al.   APPLIED PHYSICS LETTERS

Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs

(2008) Akihiko Yoshikawa et al.   JOURNAL OF CRYSTAL GROWTH