Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Using nanoindentation and cathodoluminescence to identify the bundled effect of gallium nitride grown by PA-MBE

(2017) Hua-Chiang Wen et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of SiN Treatment on Optical Properties of In x Ga1−x N/GaN MQW Blue LEDs

(2017) Z. Benzarti et al.   JOURNAL OF ELECTRONIC MATERIALS

Effect of strain relaxation and the Burstein–Moss energy shift on the optical properties of InN films grown in the self-seeded catalytic process

(2016) Kishore K. Madapu et al.   CRYSTENGCOMM

Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

(2015) Ichiro Yonenaga et al.   AIP Advances

Nanoindentation responses of InN thin films

(2014) Sheng-Rui Jian et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

(2013) M A Hafez et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy

(2013) Yuantao Zhang et al.   THIN SOLID FILMS

Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE

(2011) Fang-I Lai et al.   JOURNAL OF CRYSTAL GROWTH

Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN

(2011) V. Darakchieva et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

The explanation of InN bandgap discrepancy based on experiments and first-principle calculations

(2011) Chaoren Liu et al.   PHYSICS LETTERS A

Evaluation of threading dislocation densities in In- and N-face InN

(2010) C. S. Gallinat et al.   JOURNAL OF APPLIED PHYSICS

Growth Orientation Dependent Hardness for Epitaxial Wurtzite InN Films

(2010) Satender Kataria et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy

(2009) Yuen-Yee Wong et al.   JOURNAL OF CRYSTAL GROWTH

Characterization of InN epilayers grown on Si(111) substrates at various temperatures by MBE

(2009) Yan-Hsin Wang et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Influence of strain on the band gap energy of wurtzite InN

(2009) P. Schley et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Impact of GaN buffer layer on the growth and properties of InN islands

(2008) O. A. Laboutin et al.   APPLIED PHYSICS LETTERS

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Effect of stress and free-carrier concentration on photoluminescence in InN

(2008) D. Y. Song et al.   APPLIED PHYSICS LETTERS

Fabrication of nanostructured indium nitride by PA-MOMBE

(2008) Shou-Yi Kuo et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY