A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering

Title
A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering
Authors
Keywords
Sapphire, Dislocation Density, Buffer Layer, In2O3, Sapphire Substrate
Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 28, Issue 13, Pages 9228-9236
Publisher
Springer Nature
Online
2017-03-24
DOI
10.1007/s10854-017-6657-4

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