Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

Electron mobility of self-assembled and dislocation free InN nanorods grown on GaN nano wall network template

(2016) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate

(2014) Ke Wang et al.   APPLIED PHYSICS LETTERS

Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

(2013) Ian P. Seetoh et al.   APPLIED PHYSICS LETTERS

Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

(2013) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride

(2012) Erfan Baghani et al.   APPLIED PHYSICS LETTERS

Role of native defects in nitrogen flux dependent carrier concentration of InN films grown by molecular beam epitaxy

(2012) Malleswararao Tangi et al.   JOURNAL OF APPLIED PHYSICS

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

(2012) Jithesh Kuyyalil et al.   JOURNAL OF APPLIED PHYSICS

Dependence of crystal orientation and bandgap on substrate temperature of molecular-beam epitaxy grown InN on bare Al2O3 (0001)

(2011) Jithesh Kuyyalil et al.   JOURNAL OF APPLIED PHYSICS

Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE

(2011) Mahesh Kumar et al.   MATERIALS LETTERS

Effect of charged dislocation scattering on electrical and electrothermal transport inn-type InN

(2011) Nate Miller et al.   PHYSICAL REVIEW B

Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN

(2011) Christian Rauch et al.   PHYSICAL REVIEW B

In vacancies in InN grown by plasma-assisted molecular beam epitaxy

(2010) Floris Reurings et al.   APPLIED PHYSICS LETTERS

Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

(2010)   APPLIED PHYSICS LETTERS

Controlling the conductivity of InN

(2010) C. G. Van de Walle et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles

(2009) X. M. Duan et al.   PHYSICAL REVIEW B

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS

High mobility InN epilayers grown on AlN epilayer templates

(2008) N. Khan et al.   APPLIED PHYSICS LETTERS

Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system

(2008) I. Gherasoiu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Nitrogen vacancies in InN: Vacancy clustering and metallic bonding from first principles

(2008) X. M. Duan et al.   PHYSICAL REVIEW B