Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method
Authors
Keywords
-
Journal
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume 66, Issue 6, Pages 994-1000
Publisher
Korean Physical Society
Online
2015-04-15
DOI
10.3938/jkps.66.994

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.