Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors

A review of the synthesis of reduced defect density In x Ga 1−x N for all indium compositions

(2017) Evan A. Clinton et al.   SOLID-STATE ELECTRONICS

Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

(2015) Pavel Aseev et al.   APPLIED PHYSICS LETTERS

Low-temperature growth of InGaN films over the entire composition range by MBE

(2015) Chloe A.M. Fabien et al.   JOURNAL OF CRYSTAL GROWTH

Molecular beam epitaxy growth of GaN under Ga-rich conditions investigated by molecular dynamics simulation

(2014) Takahiro Kawamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

(2014) S. Valdueza-Felip et al.   JOURNAL OF APPLIED PHYSICS

First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si

(2013) Praveen Kumar et al.   Applied Physics Express

Uniform Low-to-High In Composition InGaN Layers Grown on Si

(2013) Pavel Aseev et al.   Applied Physics Express

Highly Sensitive and Fast Anion-Selective InN Quantum Dot Electrochemical Sensors

(2013) Naveed ul Hassan Alvi et al.   Applied Physics Express

Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation

(2013) T. Yamaguchi et al.   JOURNAL OF CRYSTAL GROWTH

Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots

(2012) N. H. Alvi et al.   APPLIED PHYSICS LETTERS

A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy

(2012) Ž. Gačević et al.   JOURNAL OF CRYSTAL GROWTH

Growth and characterization of InGaN by RF-MBE

(2010) A. Kraus et al.   JOURNAL OF CRYSTAL GROWTH

Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy

(2009) Tomohiro Yamaguchi et al.   Applied Physics Express

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

(2009) S. Fernández-Garrido et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Microstructures produced during the epitaxial growth of InGaN alloys

(2009) G.B. Stringfellow   JOURNAL OF CRYSTAL GROWTH

High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

(2008) Carl J. Neufeld et al.   APPLIED PHYSICS LETTERS

Modeling of InGaN/Si tandem solar cells

(2008) L. Hsu et al.   JOURNAL OF APPLIED PHYSICS