High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

Published 2015 View Full Article

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Title
High rate InN growth by two-step precursor generation hydride vapor phase epitaxy
Authors
Keywords
A1. Characterization, A3. Hydride vapor phase epitaxy, B1. Nitrides, B2. Semiconducting indium compounds
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 422, Issue -, Pages 15-19
Publisher
Elsevier BV
Online
2015-04-26
DOI
10.1016/j.jcrysgro.2015.04.019

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