High-electron-mobility InN epilayers grown on silicon substrate

Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE

(2018) T. A. Komissarova et al.   APPLIED PHYSICS LETTERS

High-current-density indium nitride ultrathin-film transistors on glass substrates

(2016) Takeki Itoh et al.   APPLIED PHYSICS LETTERS

High-quality InN films on GaN using graded InGaN buffers by MBE

(2016) SM Islam et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

(2015) Jianpeng Cheng et al.   APPLIED PHYSICS LETTERS

Sixteen years GaN on Si

(2015) Armin Dadgar   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy

(2013) Bernhard Loitsch et al.   APPLIED PHYSICS LETTERS

GaN on Si Technologies for Power Switching Devices

(2013) Masahiro Ishida et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Thickness Dependence of Structural and Electrical Properties of Thin InN Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

(2013) Junichi Sakaguchi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer

(2013) L. H. Dmowski et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Prospects of III-nitride optoelectronics grown on Si

(2013) D Zhu et al.   REPORTS ON PROGRESS IN PHYSICS

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

(2012) Xinqiang Wang et al.   Applied Physics Express

Electron mobility limited by scattering from screened positively charged dislocation lines within indium nitride

(2012) Erfan Baghani et al.   APPLIED PHYSICS LETTERS

Deep donor state in InN: Temperature-dependent electron transport in the electron accumulation layers and its influence on Hall-effect measurements

(2011) N. Ma et al.   APPLIED PHYSICS LETTERS

Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy

(2010)   APPLIED PHYSICS LETTERS

Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy

(2009) Tomohiro Yamaguchi et al.   Applied Physics Express

The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN

(2009) Chad S. Gallinat et al.   APPLIED PHYSICS LETTERS

Unintentional conductivity of indium nitride: transport modelling and microscopic origins

(2009) P D C King et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Sources of unintentional conductivity in InN

(2008) Anderson Janotti et al.   APPLIED PHYSICS LETTERS

InN films and nanostructures grown on Si (111) by RF-MBE

(2008) A.O. Ajagunna et al.   JOURNAL OF CRYSTAL GROWTH