A perspective on multi-channel technology for the next-generation of GaN power devices

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

(2022) Luca Nela et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

GaN FinFETs and trigate devices for power and RF applications: review and perspective

(2021) Yuhao Zhang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability

(2021) Jingcun Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High conductivity InAlN/GaN multi-channel two-dimensional electron gases

(2021) P Sohi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Multi-channel nanowire devices for efficient power conversion

(2021) L. Nela et al.   Nature Electronics

Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance

(2021) Ang Li et al.   APPLIED PHYSICS LETTERS

10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

(2021) Ming Xiao et al.   IEEE ELECTRON DEVICE LETTERS

β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm

(2021) Nidhin Kurian Kalarickal et al.   IEEE ELECTRON DEVICE LETTERS

GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V

(2021) Ang Li et al.   SUPERLATTICES AND MICROSTRUCTURES

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

(2021) Luca Nela et al.   APPLIED PHYSICS LETTERS

Tri-Gate GaN Junction HEMTs: Physics and Performance Space

(2021) Yunwei Ma et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes

(2021) Jingcun Liu et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

GaN-based power devices: Physics, reliability, and perspectives

(2021) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

(2021) Koon Hoo Teo et al.   JOURNAL OF APPLIED PHYSICS

Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

(2021) Qihao Song et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

(2020) Catherine Erine et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current

(2020) Aditya Raj et al.   IEEE ELECTRON DEVICE LETTERS

Al-rich AlGaN based transistors

(2020) Albert G. Baca et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

(2020) Ming Xiao et al.   IEEE ELECTRON DEVICE LETTERS

High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

(2020) Nidhin Kurian Kalarickal et al.   JOURNAL OF APPLIED PHYSICS

Tri-gate GaN junction HEMT

(2020) Yunwei Ma et al.   APPLIED PHYSICS LETTERS

(Ultra)Wide-Bandgap Vertical Power FinFETs

(2020) Yuhao Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O3 heterostructure channels

(2020) Praneeth Ranga et al.   Applied Physics Express

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

(2019) Luca Nela et al.   IEEE ELECTRON DEVICE LETTERS

The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

(2019) Josephine Chang et al.   IEEE ELECTRON DEVICE LETTERS

Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2

(2019) Noah Allen et al.   IEEE ELECTRON DEVICE LETTERS

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

(2019) Luca Nela et al.   IEEE ELECTRON DEVICE LETTERS

Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode

(2019) Sang-Woo Han et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

(2019) Athith Krishna et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

(2018) Jun Ma et al.   APPLIED PHYSICS LETTERS

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

(2018) Jiacheng Lei et al.   IEEE ELECTRON DEVICE LETTERS

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

(2018) Jun Ma et al.   APPLIED PHYSICS LETTERS

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

(2018) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

(2017) Yuhao Zhang et al.   IEEE ELECTRON DEVICE LETTERS

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Slanted Tri-Gates for High-Voltage GaN Power Devices

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

(2017) Michael J. Uren et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Superjunction Power Devices, History, Development, and Future Prospects

(2017) Florin Udrea et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

GaN Technology for Power Electronic Applications: A Review

(2016) Tyler J. Flack et al.   JOURNAL OF ELECTRONIC MATERIALS

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

(2013) Elison Matioli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gallium nitride devices for power electronic applications

(2013) B Jayant Baliga   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Tri-Gate Normally-Off GaN Power MISFET

(2012) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

(2011) Akira Nakajima et al.   IEEE ELECTRON DEVICE LETTERS

MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(2010) Yu Cao et al.   JOURNAL OF CRYSTAL GROWTH

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

(2008) Hidetoshi Ishida et al.   IEEE ELECTRON DEVICE LETTERS

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

(2008) Brett A. Hull et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES