Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

Published 2019 View Full Article

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Title
Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 1, Pages 99-102
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-12-05
DOI
10.1109/led.2019.2957700

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