2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

(2017) Jingnan Gao et al.   IEEE ELECTRON DEVICE LETTERS

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Slanted Tri-Gates for High-Voltage GaN Power Devices

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

(2017) Gaofei Tang et al.   IEEE ELECTRON DEVICE LETTERS

Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic Ron E/D-mode GaN HEMTs

(2017) Joel Wong et al.   IEEE ELECTRON DEVICE LETTERS

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

(2016) Jie Hu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

(2016) Jun Ma et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability

(2016) Tetsuzo Nagahisa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

(2015) Mingda Zhu et al.   IEEE ELECTRON DEVICE LETTERS

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

(2015) Qi Zhou et al.   IEEE ELECTRON DEVICE LETTERS

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

(2014) Deok Won Seo et al.   IEEE ELECTRON DEVICE LETTERS

Slant Field Plate Model for Field-Effect Transistors

(2014) Robert Coffie   IEEE TRANSACTIONS ON ELECTRON DEVICES

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

(2013) Silvia Lenci et al.   IEEE ELECTRON DEVICE LETTERS

Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

(2013) Jae-Gil Lee et al.   IEEE ELECTRON DEVICE LETTERS

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

(2013) Elison Matioli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

(2012) E. Bahat-Treidel et al.   IEEE ELECTRON DEVICE LETTERS

On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

(2010) Dawei Yan et al.   APPLIED PHYSICS LETTERS

Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

(2009) Wanjun Chen et al.   IEEE ELECTRON DEVICE LETTERS