High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

(2019) Yangyang Gao et al.   Nanoscale Research Letters

Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

(2019) Akhil Mauze et al.   APPLIED PHYSICS LETTERS

$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

(2019) Zhanbo Xia et al.   IEEE ELECTRON DEVICE LETTERS

High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

(2018) Xiaodong Yan et al.   APPLIED PHYSICS LETTERS

Structural and electronic properties of Ga2O3-Al2O3 alloys

(2018) Hartwin Peelaers et al.   APPLIED PHYSICS LETTERS

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

(2018) Yao Yao et al.   Materials Research Letters

1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of

(2018) Wenshen Li et al.   APPLIED PHYSICS LETTERS

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

(2018) Yuewei Zhang et al.   APL Materials

Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films

(2018) J. H. Leach et al.   APL Materials

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Electron mobility in monoclinic β-Ga2O3—Effect of plasmon-phonon coupling, anisotropy, and confinement

(2017) Krishnendu Ghosh et al.   JOURNAL OF MATERIALS RESEARCH

Fundamental limits on the electron mobility ofβ-Ga2O3

(2017) Youngho Kang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Intrinsic electron mobility limits inβ-Ga2O3

(2016) Nan Ma et al.   APPLIED PHYSICS LETTERS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air

(2016) K. Hoshikawa et al.   JOURNAL OF CRYSTAL GROWTH

Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

(2016) Zbigniew Galazka et al.   ECS Journal of Solid State Science and Technology

β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy

(2015) Stephen W. Kaun et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Pulsed laser deposition of gallium oxide films for high performance solar-blind photodetectors

(2015) Fei-Peng Yu et al.   Optical Materials Express

Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

(2014) Hironori Okumura et al.   Applied Physics Express

Wide bandgap engineering of (AlGa)2O3 films

(2014) Fabi Zhang et al.   APPLIED PHYSICS LETTERS

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Hydrogenated cation vacancies in semiconducting oxides

(2011) J B Varley et al.   JOURNAL OF PHYSICS-CONDENSED MATTER