GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

Title
GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 4, Pages 542-544
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2011-02-17
DOI
10.1109/led.2011.2105242

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