GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

(2020) Catherine Erine et al.   IEEE ELECTRON DEVICE LETTERS

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

(2020) Ming Xiao et al.   IEEE ELECTRON DEVICE LETTERS

A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer

(2019) Kui Dang et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration

(2019) Kui Dang et al.   IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

(2018) Jiacheng Lei et al.   IEEE ELECTRON DEVICE LETTERS

High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels

(2018) Yachao Zhang et al.   APPLIED PHYSICS LETTERS

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

(2018) Jun Ma et al.   APPLIED PHYSICS LETTERS

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

(2018) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes

(2014) J. Hu et al.   MICROELECTRONICS RELIABILITY

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

(2013) Y.-F. Wu et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

(2012) Raymond S. Pengelly et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

(2012) JunShuai Xue et al.   JOURNAL OF APPLIED PHYSICS