Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
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Title
Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 119, Issue 12, Pages 122104
Publisher
AIP Publishing
Online
2021-09-23
DOI
10.1063/5.0063638
References
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Related references
Note: Only part of the references are listed.- Model of Electron Population and Energy Band Diagram of Multiple-Channel GaN Heterostructures
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- (2018) Jun Ma et al. APPLIED PHYSICS LETTERS
- Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance
- (2018) Jun Ma et al. IEEE ELECTRON DEVICE LETTERS
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- (2015) Jin Wei et al. IEEE ELECTRON DEVICE LETTERS
- Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
- (2013) Sreenidhi Turuvekere et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz
- (2013) Y.-F. Wu et al. IEEE TRANSACTIONS ON POWER ELECTRONICS
- Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target
- (2013) S. S. Kushvaha et al. AIP Advances
- A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
- (2012) Raymond S. Pengelly et al. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
- High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures
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- AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz
- (2009) N. Sarazin et al. IEEE ELECTRON DEVICE LETTERS
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