High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

Published 2017 View Full Article

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Title
High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 3, Pages 367-370
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-02-01
DOI
10.1109/led.2017.2661755

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