High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Published 2019 View Full Article

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Title
High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 3, Pages 439-442
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2019-01-31
DOI
10.1109/led.2019.2896359

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