p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer

(2021) Tao Zhang et al.   IEEE ELECTRON DEVICE LETTERS

10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

(2021) Ming Xiao et al.   IEEE ELECTRON DEVICE LETTERS

GaN-based power devices: Physics, reliability, and perspectives

(2021) Matteo Meneghini et al.   JOURNAL OF APPLIED PHYSICS

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

(2020) Ming Xiao et al.   IEEE ELECTRON DEVICE LETTERS

Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

(2020) Sang-Woo Han et al.   IEEE ELECTRON DEVICE LETTERS

Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

(2020) Luca Nela et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates

(2019) Xiangdong Li et al.   IEEE ELECTRON DEVICE LETTERS

A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

(2019) Tao Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

(2019) Luca Nela et al.   IEEE ELECTRON DEVICE LETTERS

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

(2018) Jun Ma et al.   APPLIED PHYSICS LETTERS

Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

(2018) Jingnan Gao et al.   IEEE ELECTRON DEVICE LETTERS

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

(2018) Jiacheng Lei et al.   IEEE ELECTRON DEVICE LETTERS

Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology

(2018) Richard Reiner et al.   IET Power Electronics

The 2018 GaN power electronics roadmap

(2018) H Amano et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

(2018) Kuang-Po Hsueh et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

(2018) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage

(2017) Jun Ma et al.   IEEE ELECTRON DEVICE LETTERS

GaN-on-Si Power Technology: Devices and Applications

(2017) Kevin J. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

(2016) Chuan-Wei Tsou et al.   IEEE ELECTRON DEVICE LETTERS

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

(2016) Jie Hu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

(2015) Mingda Zhu et al.   IEEE ELECTRON DEVICE LETTERS

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

(2015) Qi Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

(2013) Silvia Lenci et al.   IEEE ELECTRON DEVICE LETTERS

Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

(2013) Elison Matioli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES