High conductivity InAlN/GaN multi-channel two-dimensional electron gases
Published 2021 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
High conductivity InAlN/GaN multi-channel two-dimensional electron gases
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 36, Issue 5, Pages 055020
Publisher
IOP Publishing
Online
2021-03-31
DOI
10.1088/1361-6641/abf3a7
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- InAlN underlayer for near ultraviolet InGaN based light emitting diodes
- (2019) Camille Haller et al. Applied Physics Express
- The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier
- (2019) Josephine Chang et al. IEEE ELECTRON DEVICE LETTERS
- Dopant-Induced Modifications of GaxIn(1–x)P Nanowire-Based p–n Junctions Monolithically Integrated on Si(111)
- (2018) Nicolas Bologna et al. ACS Applied Materials & Interfaces
- Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
- (2018) Jun Ma et al. APPLIED PHYSICS LETTERS
- Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance
- (2018) Jun Ma et al. IEEE ELECTRON DEVICE LETTERS
- Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture
- (2016) David A. Deen et al. APPLIED PHYSICS LETTERS
- Magneto-ballistic transport in GaN nanowires
- (2016) Giovanni Santoruvo et al. APPLIED PHYSICS LETTERS
- Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
- (2016) David A. Deen et al. JOURNAL OF APPLIED PHYSICS
- Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor
- (2015) Jin Wei et al. IEEE ELECTRON DEVICE LETTERS
- Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures
- (2015) F. Wu et al. JOURNAL OF APPLIED PHYSICS
- Room-Temperature Ballistic Transport in III-Nitride Heterostructures
- (2015) Elison Matioli et al. NANO LETTERS
- Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices
- (2014) Yue Hao et al. CHINESE SCIENCE BULLETIN
- GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
- (2014) Stephen W Kaun et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers
- (2012) A. Kamath et al. IEEE ELECTRON DEVICE LETTERS
- The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
- (2012) Xiao-Dong Wang et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications
- (2012) JunShuai Xue et al. JOURNAL OF APPLIED PHYSICS
- Multivalued Logic Using a Novel Multichannel GaN MOS Structure
- (2011) Narayanan Ramanan et al. IEEE ELECTRON DEVICE LETTERS
- Silicon impurity-induced layer disordering of AlGaN/AlN superlattices
- (2010) J. J. Wierer et al. APPLIED PHYSICS LETTERS
- MBE growth of high conductivity single and multiple AlN/GaN heterojunctions
- (2010) Yu Cao et al. JOURNAL OF CRYSTAL GROWTH
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started