Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective

Impact of Self-Heating on Negative-Capacitance FinFET: Device-Circuit Interaction

(2021) Om Prakash et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution

(2020) You-Sheng Liu et al.   IEEE ELECTRON DEVICE LETTERS

Is negative capacitance FET a steep-slope logic switch?

(2020) Wei Cao et al.   Nature Communications

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

(2020) Yi-Hsuan Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Design Principles of Self-Compensated NBTI-Free Negative Capacitor FinFET

(2020) K. Karda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A memory window expression to evaluate the endurance of ferroelectric FETs

(2020) Nicolò Zagni et al.   APPLIED PHYSICS LETTERS

Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching

(2020) Shan Deng et al.   IEEE ELECTRON DEVICE LETTERS

The future of ferroelectric field-effect transistor technology

(2020) Asif Islam Khan et al.   Nature Electronics

A critical review of recent progress on negative capacitance field-effect transistors

(2019) Muhammad A. Alam et al.   APPLIED PHYSICS LETTERS

Program/Erase Cycling Degradation Mechanism of HfO2-Based FeFET Memory Devices

(2019) Binjian Zeng et al.   IEEE ELECTRON DEVICE LETTERS

Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors

(2019) Kuen-Yi Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance

(2019) Halid Mulaosmanovic et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors

(2019) Cristobal Alessandri et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

(2018) T. Ali et al.   APPLIED PHYSICS LETTERS

A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

(2018) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Influence of Interface Traps on Ferroelectric NC-FETs

(2018) Tommaso Rollo et al.   IEEE ELECTRON DEVICE LETTERS

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

(2018) Kai Ni et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

(2018) Thomas Mikolajick et al.   MRS BULLETIN

On the stabilization of ferroelectric negative capacitance in nanoscale devices

(2018) Michael Hoffmann et al.   Nanoscale

Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor

(2018) Ming-Yen Kao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Negative Capacitance Transistors

(2018) Justin C. Wong et al.   PROCEEDINGS OF THE IEEE

Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating

(2018) Halid Mulaosmanovic et al.   IEEE ELECTRON DEVICE LETTERS

Intrinsic speed limit of negative capacitance transistors

(2017) Korok Chatterjee et al.   IEEE ELECTRON DEVICE LETTERS

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

(2017) Karine Florent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

(2017) Milan Pešić et al.   Journal of Computational Electronics

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Switching Dynamics and Hot Atom Damage in Landau Switches

(2016) K. KARDA et al.   IEEE ELECTRON DEVICE LETTERS

Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

(2016) Nanbo Gong et al.   IEEE ELECTRON DEVICE LETTERS

Negative Capacitance Behavior in a Leaky Ferroelectric

(2016) Asif Islam Khan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part II: Model Validation

(2016) Girish Pahwa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

(2014) Chun-Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Observation and Control of Hot Atom Damage in Ferroelectric Devices

(2014) Muhammad Masuduzzaman et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Negative capacitance in a ferroelectric capacitor

(2014) Asif Islam Khan et al.   NATURE MATERIALS

The origin and consequences of push-pull breakdown in series connected dielectrics

(2012) Muhammad Masuduzzaman et al.   APPLIED PHYSICS LETTERS

The origin of broad distribution of breakdown times in polycrystalline thin film dielectrics

(2012) Muhammad Masuduzzaman et al.   APPLIED PHYSICS LETTERS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Modeling and Design of Ferroelectric MOSFETs

(2011) Han-Ping Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS