Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

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Title
Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 1, Pages 138-140
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-01-04
DOI
10.1109/led.2013.2290117

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