Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

Published 2020 View Full Article

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Title
Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 4, Pages 1581-1585
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-03-04
DOI
10.1109/ted.2020.2973652

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