A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf1–xZrxO2 grains

(2017) Christopher Künneth et al.   JOURNAL OF APPLIED PHYSICS

Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

(2017) Rohit Batra et al.   Journal of Physical Chemistry C

Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

(2016) Michael Hoffmann et al.   ADVANCED FUNCTIONAL MATERIALS

Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Correlation between the macroscopic ferroelectric material properties of Si:HfO2and the statistics of 28 nm FeFET memory arrays

(2016) S. Mueller et al.   FERROELECTRICS

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conduction barrier offset engineering for DRAM capacitor scaling

(2016) Milan Pešić et al.   SOLID-STATE ELECTRONICS

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

(2016) Seul Ji Song et al.   Scientific Reports

Fabrication and investigation of three-dimensional ferroelectric capacitors for the application of FeRAM

(2016) Chia-Pin Yeh et al.   AIP Advances

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy

(2015) Chao Li et al.   Nano Research

Impact of charge trapping on the ferroelectric switching behavior of doped HfO2

(2015) Milan Pešić et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors

(2015) Michael Hoffmann et al.   Nano Energy

Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide

(2014) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectricity in Si-Doped HfO2Revealed: A Binary Lead-Free Ferroelectric

(2014) Dominik Martin et al.   ADVANCED MATERIALS

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

(2014) S. Clima et al.   APPLIED PHYSICS LETTERS

Observation and Control of Hot Atom Damage in Ferroelectric Devices

(2014) Muhammad Masuduzzaman et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Interplay between gadolinium dopants and oxygen vacancies in HfO2: A density functional theory plus Hubbard U investigation

(2014) Wei Zhang et al.   JOURNAL OF APPLIED PHYSICS

Antiferroelectricity in thin-filmZrO2from first principles

(2014) Sebastian E. Reyes-Lillo et al.   PHYSICAL REVIEW B

Pathways towards ferroelectricity in hafnia

(2014) Tran Doan Huan et al.   PHYSICAL REVIEW B

Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

(2014) Min Hyuk Park et al.   Advanced Energy Materials

About the deformation of ferroelectric hystereses

(2014) T. Schenk et al.   Applied Physics Reviews

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

(2013) Dayu Zhou et al.   APPLIED PHYSICS LETTERS

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

(2012) X. A. Tran et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Charge transport in dielectrics via tunneling between traps

(2011) K. A. Nasyrov et al.   JOURNAL OF APPLIED PHYSICS

First-principles free energies and Ginzburg-Landau theory of domains and ferroelectric phase transitions inBaTiO3

(2010) Anil Kumar et al.   PHYSICAL REVIEW B

Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study

(2009) Naoto Umezawa   APPLIED PHYSICS LETTERS

Energetics and electronic structure of aluminum point defects in HfO2: A first-principles study

(2009) Z. F. Hou et al.   JOURNAL OF APPLIED PHYSICS

Polarization fatigue in ferroelectric thin films and related materials

(2009) X. J. Lou   JOURNAL OF APPLIED PHYSICS

Monoclinic to tetragonal transformations in hafnia and zirconia: A combined calorimetric and density functional study

(2009) Xuhui Luo et al.   PHYSICAL REVIEW B

Effects of Y doping on the structural stability and defect properties of cubic HfO[sub 2]

(2008) G. H. Chen et al.   JOURNAL OF APPLIED PHYSICS

Stabilization of the high-k tetragonal phase in HfO2: The influence of dopants and temperature from ab initio simulations

(2008) Dominik Fischer et al.   JOURNAL OF APPLIED PHYSICS

Hardening-softening transition in Fe-doped Pb(Zr,Ti)O3 ceramics and evolution of the third harmonic of the polarization response

(2008) Maxim I. Morozov et al.   JOURNAL OF APPLIED PHYSICS

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

(2007) Sayeef Salahuddin et al.   NANO LETTERS