New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature
出版年份 2021 全文链接
标题
New approach for fabrication of annealing-free ferroelectric HfO2-based films at room temperature
作者
关键词
Ferroelectric materials, Ion-beam processing, Sputtering, Phase transformations, Hafnium oxide
出版物
CERAMICS INTERNATIONAL
Volume 47, Issue 19, Pages 27843-27848
出版商
Elsevier BV
发表日期
2021-06-26
DOI
10.1016/j.ceramint.2021.06.212
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Phase transformation and dielectric properties of Y doped HfO2 thin films
- (2021) Hailong Liang et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method
- (2020) Takanori Mimura et al. APPLIED PHYSICS LETTERS
- Possible electrochemical origin of ferroelectricity in HfO2 thin films
- (2020) Maya D. Glinchuk et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint
- (2020) Min Chul Chun et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Toward Thick Piezoelectric HfO 2 ‐Based Films
- (2019) Tony Schenk et al. Physica Status Solidi-Rapid Research Letters
- Chemical solution deposition of ferroelectric Sr:HfO 2 film from inorganic salt precursors
- (2018) Anqi Wei et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study
- (2018) Robin Materlik et al. JOURNAL OF APPLIED PHYSICS
- Kinetic pathway of the ferroelectric phase formation in doped HfO2 films
- (2017) Lun Xu et al. JOURNAL OF APPLIED PHYSICS
- Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
- (2017) Bo-Ting Lin et al. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
- Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf 0.5 Zr 0.5 )O 2 thin films deposited on various substrates
- (2017) Takahisa Shiraishi et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment
- (2017) Min Hyuk Park et al. Nanoscale
- An extensive study of the influence of dopants on the ferroelectric properties of HfO2
- (2017) S. Starschich et al. Journal of Materials Chemistry C
- A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film
- (2017) Yuxing Li et al. IEEE Journal of the Electron Devices Society
- Structure and electrical properties of pure and yttrium-doped HfO 2 films by chemical solution deposition through layer by layer crystallization process
- (2017) Hailong Liang et al. MATERIALS & DESIGN
- The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
- (2015) R. Materlik et al. JOURNAL OF APPLIED PHYSICS
- Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
- (2014) S. Starschich et al. APPLIED PHYSICS LETTERS
- Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
- (2012) T. Olsen et al. APPLIED PHYSICS LETTERS
- Modeling evaporation, ion-beam assist, and magnetron sputtering of thin metal films over realistic time scales
- (2012) S. Blackwell et al. PHYSICAL REVIEW B
- Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films
- (2012) Ekaterina Yurchuk et al. THIN SOLID FILMS
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