Short-Term Memory Dynamics of TiN/Ti/TiO2/SiOx/Si Resistive Random Access Memory

Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

(2020) Chandreswar Mahata et al.   JOURNAL OF ALLOYS AND COMPOUNDS

A comprehensive review on emerging artificial neuromorphic devices

(2020) Jiadi Zhu et al.   Applied Physics Reviews

Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films

(2020) Roman V. Tominov et al.   Nanomaterials

Pathways to efficient neuromorphic computing with non-volatile memory technologies

(2020) I. Chakraborty et al.   Applied Physics Reviews

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

(2020) Zongjie Shen et al.   Nanomaterials

Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device

(2019) Andrey Sergeevich Sokolov et al.   NPG Asia Materials

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

(2019) Jonas Deuermeier et al.   Nanomaterials

Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation

(2019) Dong Keun Lee et al.   SOLID-STATE ELECTRONICS

Laser-Fabricated Reduced Graphene Oxide Memristors

(2019) Romero et al.   Nanomaterials

Electronic synapses with near-linear weight update using MoS2/graphene memristors

(2019) Adithi Krishnaprasad et al.   APPLIED PHYSICS LETTERS

A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks

(2019) Wei Wang et al.   IEEE ELECTRON DEVICE LETTERS

Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing

(2019) Jun Tae Jang et al.   Electronics

Towards spike-based machine intelligence with neuromorphic computing

(2019) Kaushik Roy et al.   NATURE

Properties of Resistive Switching in TiO₂ Nanocluster-SiOx(x

(2018) Seunggon Song et al.   Journal of Semiconductor Technology and Science

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements

(2018) Kibong Moon et al.   IEEE Journal of the Electron Devices Society

Recommended Methods to Study Resistive Switching Devices

(2018) Mario Lanza et al.   Advanced Electronic Materials

Conduction mechanisms at distinct resistive levels of Pt/TiO2-x/Pt memristors

(2018) L. Michalas et al.   APPLIED PHYSICS LETTERS

TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

(2018) Jigang Ma et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Emerging memory technologies for neuromorphic computing

(2018) Chul-Heung Kim et al.   NANOTECHNOLOGY

Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application

(2018) Suhyun Bang et al.   SOLID-STATE ELECTRONICS

Nano-cone resistive memory for ultralow power operation

(2017) Sungjun Kim et al.   NANOTECHNOLOGY

Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

(2017) Sungjun Kim et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Reservoir computing using dynamic memristors for temporal information processing

(2017) Chao Du et al.   Nature Communications

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

(2017) R. Aluguri et al.   AIP Advances

Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

(2017) Xiaobing Yan et al.   Journal of Materials Chemistry C

TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

(2016) Jaesung Park et al.   IEEE ELECTRON DEVICE LETTERS

Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si

(2016) Muxi Yu et al.   JOURNAL OF APPLIED PHYSICS

Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties

(2016) P. Bousoulas et al.   JOURNAL OF APPLIED PHYSICS

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

(2016) Somsubhra Chakrabarti et al.   Nanoscale Research Letters

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

(2016) Sungjun Kim et al.   AIP Advances

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

(2016) Somsubhra Chakrabarti et al.   Nanoscale Research Letters

Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

(2015) Umesh Chand et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

(2015) M. Prezioso et al.   NATURE

Memory and Information Processing in Neuromorphic Systems

(2015) Giacomo Indiveri et al.   PROCEEDINGS OF THE IEEE

Amorphous Metal-Sulphide Microfibers Enable Photonic Synapses for Brain-Like Computing

(2015) Behrad Gholipour et al.   Advanced Optical Materials

Ferroelectric Artificial Synapses for Recognition of a Multishaded Image

(2014) Yukihiro Kaneko et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon

(2014) Chengqing Hu et al.   NANO LETTERS

Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

(2014) Yi Li et al.   Scientific Reports

Resistive switching of oxygen enhanced TiO2 thin-film devices

(2013) Iulia Salaoru et al.   APPLIED PHYSICS LETTERS

In situcontrol of oxygen vacancies in TiO2by atomic layer deposition for resistive switching devices

(2013) Sang-Joon Park et al.   NANOTECHNOLOGY

Observation, Characterization and Modeling of Memristor Current Spikes

(2013) Ella Gale et al.   Applied Mathematics & Information Sciences

Ultrafast Synaptic Events in a Chalcogenide Memristor

(2013) Yi Li et al.   Scientific Reports

Stochastic learning in oxide binary synaptic device for neuromorphic computing

(2013) Shimeng Yu et al.   Frontiers in Neuroscience

On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration

(2012) Rui Yang et al.   ACS Nano

High precision analogue memristor state tuning

(2012) R. Berdan et al.   ELECTRONICS LETTERS

Low-Energy Robust Neuromorphic Computation Using Synaptic Devices

(2012) Duygu Kuzum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell

(2012) Kyung Jean Yoon et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices

(2010) Kuyyadi P Biju et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology