Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties

Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

(2016) Alessandro Grossi et al.   SOLID-STATE ELECTRONICS

Physics of the Switching Kinetics in Resistive Memories

(2015) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Self-Limited Switching in Ta2O5/TaOxMemristors Exhibiting Uniform Multilevel Changes in Resistance

(2015) Kyung Min Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device

(2015) Yu-Fen Wang et al.   Scientific Reports

Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping

(2014) Sungho Kim et al.   ACS Nano

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

(2014) Jung Ho Yoon et al.   ADVANCED FUNCTIONAL MATERIALS

Influence of oxygen content of room temperature TiO2−x deposited films for enhanced resistive switching memory performance

(2014) P. Bousoulas et al.   JOURNAL OF APPLIED PHYSICS

Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

(2014) Min Ju Yun et al.   JOURNAL OF APPLIED PHYSICS

Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO 2−x thin films

(2014) P. Bousoulas et al.   THIN SOLID FILMS

Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching

(2013) Katsumasa Kamiya et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

(2013) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device

(2013) Y. S. Chen et al.   JOURNAL OF APPLIED PHYSICS

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

(2013) Onofrio Pirrotta et al.   JOURNAL OF APPLIED PHYSICS

In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure

(2013) Gyeong-Su Park et al.   Nature Communications

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

(2013) Sungho Kim et al.   Scientific Reports

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

(2011) Ting Chang et al.   ACS Nano

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Rectifying characteristic of Pt/TiOx/metal/Pt controlled by electronegativity

(2010)   APPLIED PHYSICS LETTERS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Diffusion of oxygen vacancies on a strained rutileTiO2(110)surface

(2010) Zhao-Wu Wang et al.   PHYSICAL REVIEW B

Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions

(2009) Young Ho Do et al.   APPLIED PHYSICS LETTERS

The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2

(2009) Keith McKenna et al.   APPLIED PHYSICS LETTERS

Energetics and diffusion of intrinsic surface and subsurface defects on anatase TiO[sub 2](101)

(2009) Hongzhi Cheng et al.   JOURNAL OF CHEMICAL PHYSICS

Surface and subsurface oxygen vacancies in anataseTiO2and differences with rutile

(2009) Hongzhi Cheng et al.   PHYSICAL REVIEW B

Evidence for the Predominance of Subsurface Defects on Reduced AnataseTiO2(101)

(2009) Yunbin He et al.   PHYSICAL REVIEW LETTERS