Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing
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Title
Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing
Authors
Keywords
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Journal
Electronics
Volume 8, Issue 10, Pages 1087
Publisher
MDPI AG
Online
2019-09-26
DOI
10.3390/electronics8101087
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