Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application

Published 2018 View Full Article

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Title
Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application
Authors
Keywords
Gradual switching, Self-rectification, Resistive-switching random-access memory, Amorphous indium gallium zinc oxide, Synaptic device
Journal
SOLID-STATE ELECTRONICS
Volume 150, Issue -, Pages 60-65
Publisher
Elsevier BV
Online
2018-10-04
DOI
10.1016/j.sse.2018.10.003

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