TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

Published 2018 View Full Article

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Title
TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 1, Pages 777-784
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-12-04
DOI
10.1109/ted.2018.2881294

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