Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth

(2019) J. Puustinen et al.   JOURNAL OF CRYSTAL GROWTH

MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm

(2019) Wenwu Pan et al.   APPLIED PHYSICS LETTERS

Spontaneous nanostructure formation in GaAsBi alloys

(2018) C. Ryan Tait et al.   JOURNAL OF CRYSTAL GROWTH

Surfactant-induced chemical ordering of GaAsN:Bi

(2018) J. Occena et al.   APPLIED PHYSICS LETTERS

Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates

(2017) Yingxin Guan et al.   JOURNAL OF CRYSTAL GROWTH

Thermodynamic considerations for epitaxial growth of III/V alloys

(2017) G.B. Stringfellow   JOURNAL OF CRYSTAL GROWTH

AlAs as a Bi blocking barrier in GaAsBi multi-quantum wells: Structural analysis

(2017) Renata Butkutė et al.   Lithuanian Journal of Physics

GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

(2017) Pallavi Kisan Patil et al.   NANOTECHNOLOGY

Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates

(2017) Kristen N Collar et al.   NANOTECHNOLOGY

The Role of Epitaxial Strain on the Spontaneous Formation of Bi-Rich Nanostructures in Ga(As,Bi) Epilayers and Quantum Wells

(2017) E. Luna et al.   Nanoscience and Nanotechnology Letters

Understanding and reducing deleterious defects in the metastable alloy GaAsBi

(2017) Guangfu Luo et al.   NPG Asia Materials

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

(2017) Lijuan Wang et al.   Crystals

Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1−xBix

(2016) Jincheng Li et al.   APPLIED PHYSICS LETTERS

Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys

(2016) R. L. Field et al.   APPLIED PHYSICS LETTERS

Observation of compound semiconductors and heterovalent interfaces using aberration-corrected scanning transmission electron microscopy

(2016) David J. Smith et al.   JOURNAL OF MATERIALS RESEARCH

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix/GaAs quantum wells

(2016) E Luna et al.   NANOTECHNOLOGY

Bright-field imaging of compound semiconductors using aberration-corrected scanning transmission electron microscopy

(2016) Toshihiro Aoki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

(2015) E. Luna et al.   JOURNAL OF APPLIED PHYSICS

Detecting lateral composition modulation in dilute Ga(As,Bi) epilayers

(2015) Mingjian Wu et al.   NANOTECHNOLOGY

Growth and structural characterization of GaAsBi/GaAs multiple quantum wells

(2015) Robert D Richards et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging

(2015) A. W. Wood et al.   APL Materials

Observation of atomic ordering of triple-period-A and -B type in GaAsBi

(2014) Mingjian Wu et al.   APPLIED PHYSICS LETTERS

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

(2014) Daniel F Reyes et al.   Nanoscale Research Letters

Variation of lattice constant and cluster formation in GaAsBi

(2013) J. Puustinen et al.   JOURNAL OF APPLIED PHYSICS

Exploring aberration-corrected electron microscopy for compound semiconductors

(2013) David J. Smith et al.   Microscopy

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

(2012) Dongsheng Fan et al.   APPLIED PHYSICS LETTERS

Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

(2012) R. B. Lewis et al.   APPLIED PHYSICS LETTERS

MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures

(2012) P. Ludewig et al.   JOURNAL OF CRYSTAL GROWTH

Ab initiostudy of the strain dependent thermodynamics of Bi doping in GaAs

(2012) Heather Jacobsen et al.   PHYSICAL REVIEW B

Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy

(2012) Adam Duzik et al.   SURFACE SCIENCE

Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

(2011) F. Bastiman et al.   JOURNAL OF CRYSTAL GROWTH

Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy

(2011) M. Masnadi-Shirazi et al.   JOURNAL OF CRYSTAL GROWTH

Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

(2009) Cyril Cayron et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides

(2008) T. Tiedje et al.   International Journal of Nanotechnology