Variation of lattice constant and cluster formation in GaAsBi

Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

(2013) P. M. Mooney et al.   JOURNAL OF APPLIED PHYSICS

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

(2013) S Mazzucato et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effects of rapid thermal annealing on GaAs1-xBix alloys

(2012) A. R. Mohmad et al.   APPLIED PHYSICS LETTERS

Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

(2012) R. B. Lewis et al.   APPLIED PHYSICS LETTERS

The effect of Bi composition to the optical quality of GaAs1−xBix

(2011) A. R. Mohmad et al.   APPLIED PHYSICS LETTERS

Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

(2010) Z Chine et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Postgrowth annealing of GaInAs∕GaAs and GaInAsN∕GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality

(2008) J. Pakarinen et al.   APPLIED PHYSICS LETTERS

Structural investigation of GaAs1−xBix/GaAs multiquantum wells

(2008) Yoriko Tominaga et al.   APPLIED PHYSICS LETTERS

Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037alloy

(2008) I Moussa et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY