MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm
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Title
MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 15, Pages 152102
Publisher
AIP Publishing
Online
2019-04-16
DOI
10.1063/1.5086540
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Related references
Note: Only part of the references are listed.- 1.142 μm GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
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- Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers
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- Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared
- (2013) S. J. Sweeney et al. JOURNAL OF APPLIED PHYSICS
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- The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
- (2012) Z. Batool et al. JOURNAL OF APPLIED PHYSICS
- Band engineering in dilute nitride and bismide semiconductor lasers
- (2012) C A Broderick et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Kinetically limited growth of GaAsBi by molecular-beam epitaxy
- (2011) A.J. Ptak et al. JOURNAL OF CRYSTAL GROWTH
- Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
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- (2011) Muhammad Usman et al. PHYSICAL REVIEW B
- Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBixLaser by Photo-Pumping
- (2010) Yoriko Tominaga et al. Applied Physics Express
- Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix
- (2008) X. Lu et al. APPLIED PHYSICS LETTERS
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