Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

Title
Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 101, Issue 8, Pages 082112
Publisher
AIP Publishing
Online
2012-08-25
DOI
10.1063/1.4748172

Ask authors/readers for more resources

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started