Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1−xBix

First-principles studies on molecular beam epitaxy growth ofGaAs1−xBix

(2015) Guangfu Luo et al.   PHYSICAL REVIEW B

GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

(2015) Jincheng Li et al.   AIP Advances

Growth of GaAs1−xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics

(2014) Tong-Ho Kim et al.   JOURNAL OF APPLIED PHYSICS

Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

(2013) G. Vardar et al.   APPLIED PHYSICS LETTERS

Electron spin dynamics and g-factor in GaAsBi

(2013) S. Mazzucato et al.   APPLIED PHYSICS LETTERS

Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

(2012) R. B. Lewis et al.   APPLIED PHYSICS LETTERS

Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy

(2011) M. Masnadi-Shirazi et al.   JOURNAL OF CRYSTAL GROWTH

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

(2011) A.J. Ptak et al.   JOURNAL OF CRYSTAL GROWTH

Clustering effects in Ga(AsBi)

(2010) Sebastian Imhof et al.   APPLIED PHYSICS LETTERS

Composition dependence of photoluminescence of GaAs1−xBix alloys

(2009) Xianfeng Lu et al.   APPLIED PHYSICS LETTERS

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

(2008) X. Lu et al.   APPLIED PHYSICS LETTERS