GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

Published 2017 View Full Article

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Title
GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique
Authors
Keywords
-
Journal
NANOTECHNOLOGY
Volume 28, Issue 10, Pages 105702
Publisher
IOP Publishing
Online
2017-02-01
DOI
10.1088/1361-6528/aa596c

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