Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers
出版年份 2019 全文链接
标题
Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 126, Issue 8, Pages 085305
出版商
AIP Publishing
发表日期
2019-08-27
DOI
10.1063/1.5111532
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth
- (2019) J. Puustinen et al. JOURNAL OF CRYSTAL GROWTH
- MBE growth strategy and optimization of GaAsBi quantum well light emitting structure beyond 1.2 μm
- (2019) Wenwu Pan et al. APPLIED PHYSICS LETTERS
- Spontaneous nanostructure formation in GaAsBi alloys
- (2018) C. Ryan Tait et al. JOURNAL OF CRYSTAL GROWTH
- Surfactant-induced chemical ordering of GaAsN:Bi
- (2018) J. Occena et al. APPLIED PHYSICS LETTERS
- Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates
- (2017) Yingxin Guan et al. JOURNAL OF CRYSTAL GROWTH
- Thermodynamic considerations for epitaxial growth of III/V alloys
- (2017) G.B. Stringfellow JOURNAL OF CRYSTAL GROWTH
- AlAs as a Bi blocking barrier in GaAsBi multi-quantum wells: Structural analysis
- (2017) Renata Butkutė et al. Lithuanian Journal of Physics
- GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique
- (2017) Pallavi Kisan Patil et al. NANOTECHNOLOGY
- Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates
- (2017) Kristen N Collar et al. NANOTECHNOLOGY
- The Role of Epitaxial Strain on the Spontaneous Formation of Bi-Rich Nanostructures in Ga(As,Bi) Epilayers and Quantum Wells
- (2017) E. Luna et al. Nanoscience and Nanotechnology Letters
- Understanding and reducing deleterious defects in the metastable alloy GaAsBi
- (2017) Guangfu Luo et al. NPG Asia Materials
- Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
- (2017) Lijuan Wang et al. Crystals
- Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1−xBix
- (2016) Jincheng Li et al. APPLIED PHYSICS LETTERS
- Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys
- (2016) R. L. Field et al. APPLIED PHYSICS LETTERS
- Observation of compound semiconductors and heterovalent interfaces using aberration-corrected scanning transmission electron microscopy
- (2016) David J. Smith et al. JOURNAL OF MATERIALS RESEARCH
- Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1−xBix/GaAs quantum wells
- (2016) E Luna et al. NANOTECHNOLOGY
- Bright-field imaging of compound semiconductors using aberration-corrected scanning transmission electron microscopy
- (2016) Toshihiro Aoki et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers
- (2015) E. Luna et al. JOURNAL OF APPLIED PHYSICS
- Detecting lateral composition modulation in dilute Ga(As,Bi) epilayers
- (2015) Mingjian Wu et al. NANOTECHNOLOGY
- Growth and structural characterization of GaAsBi/GaAs multiple quantum wells
- (2015) Robert D Richards et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging
- (2015) A. W. Wood et al. APL Materials
- Observation of atomic ordering of triple-period-A and -B type in GaAsBi
- (2014) Mingjian Wu et al. APPLIED PHYSICS LETTERS
- Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
- (2014) Daniel F Reyes et al. Nanoscale Research Letters
- Variation of lattice constant and cluster formation in GaAsBi
- (2013) J. Puustinen et al. JOURNAL OF APPLIED PHYSICS
- Exploring aberration-corrected electron microscopy for compound semiconductors
- (2013) David J. Smith et al. Microscopy
- Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures
- (2012) Dongsheng Fan et al. APPLIED PHYSICS LETTERS
- Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy
- (2012) R. B. Lewis et al. APPLIED PHYSICS LETTERS
- MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
- (2012) P. Ludewig et al. JOURNAL OF CRYSTAL GROWTH
- Ab initiostudy of the strain dependent thermodynamics of Bi doping in GaAs
- (2012) Heather Jacobsen et al. PHYSICAL REVIEW B
- Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy
- (2012) Adam Duzik et al. SURFACE SCIENCE
- Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM
- (2011) F. Bastiman et al. JOURNAL OF CRYSTAL GROWTH
- Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy
- (2011) M. Masnadi-Shirazi et al. JOURNAL OF CRYSTAL GROWTH
- Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins
- (2009) Cyril Cayron et al. JOURNAL OF APPLIED CRYSTALLOGRAPHY
- Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides
- (2008) T. Tiedje et al. International Journal of Nanotechnology
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now