Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth

Published 2019 View Full Article

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Title
Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth
Authors
Keywords
A3. Molecular beam epitaxy, B1. Bismuth compounds, B2. Semiconducting III-V materials, B2. Semiconducting ternary compounds
Journal
JOURNAL OF CRYSTAL GROWTH
Volume -, Issue -, Pages -
Publisher
Elsevier BV
Online
2019-01-09
DOI
10.1016/j.jcrysgro.2019.01.010

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