Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP

(2016) Y. Gu et al.   APPLIED PHYSICS LETTERS

Bismuth-content-dependent polarized Raman spectrum of InPBi alloy

(2016) Guan-Nan Wei et al.   Chinese Physics B

The effect of BiIn hetero-antisite defects in In1–xPBix alloy

(2016) Liyuan Wu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1−xBixdilute bismide alloys

(2016) Łukasz Gelczuk et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Anomalous photoluminescence in InP1−xBix

(2016) Xiaoyan Wu et al.   Scientific Reports

Novel InGaPBi single crystal grown by molecular beam epitaxy

(2015) Li Yue et al.   Applied Physics Express

Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells

(2015) Y. Gu et al.   APPLIED PHYSICS LETTERS

Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm

(2015) K. Shimomura et al.   APPLIED PHYSICS LETTERS

Bismuth Effects on Electronic Levels in GaSb(Bi)/AlGaSb Quantum Wells Probed by Infrared Photoreflectance

(2015) Xi-Ren Chen et al.   CHINESE PHYSICS LETTERS

Theoretical calculations on structural and electronic properties of BGaAsBi alloys

(2015) Metin Aslan et al.   EUROPEAN PHYSICAL JOURNAL B

In(AsN) mid-infrared emission enhanced by rapid thermal annealing

(2015) M. Kesaria et al.   INFRARED PHYSICS & TECHNOLOGY

Insight into the epitaxial growth of high optical quality GaAs1–xBix

(2015) D. A. Beaton et al.   JOURNAL OF APPLIED PHYSICS

Thermal quenching of photoluminescence in Ga(AsBi)

(2015) M. K. Shakfa et al.   JOURNAL OF APPLIED PHYSICS

Bi flux-dependent MBE growth of GaSbBi alloys

(2015) M.K. Rajpalke et al.   JOURNAL OF CRYSTAL GROWTH

Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy

(2015) Y. Essouda et al.   MATERIALS LETTERS

Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys

(2015) H. Fitouri et al.   OPTICAL MATERIALS

Infrared photoreflectance investigation of resonant levels and band edge structure in InSb

(2015) Xiren Chen et al.   OPTICS LETTERS

Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications

(2015) Vaidas Pačebutas et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

(2015) A R Mohmad et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effect of rapid thermal annealing on InP1−xBixgrown by molecular beam epitaxy

(2015) X Y Wu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPyquantum wells for laser applications

(2015) H Kim et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers

(2015) I P Marko et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

(2015) K Wang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Raman scattering studies of dilute InP1−xBixalloys reveal unusually strong oscillator strength for Bi-induced modes

(2015) Wenwu Pan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

(2015) T Thomas et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys

(2015) G Pettinari et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Low- and high-energy photoluminescence from GaSb1−xBixwith 0

(2014) Jan Kopaczek et al.   Applied Physics Express

Electrically pumped room-temperature operation of GaAs1−xBixlaser diodes with low-temperature dependence of oscillation wavelength

(2014) Takuma Fuyuki et al.   Applied Physics Express

Increased InAs quantum dot size and density using bismuth as a surfactant

(2014) Vaishno D. Dasika et al.   APPLIED PHYSICS LETTERS

Observation of atomic ordering of triple-period-A and -B type in GaAsBi

(2014) Mingjian Wu et al.   APPLIED PHYSICS LETTERS

Bi-induced band gap reduction in epitaxial InSbBi alloys

(2014) M. K. Rajpalke et al.   APPLIED PHYSICS LETTERS

Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1−xBix dilute bismide with x ≤ 0.034

(2014) J. Kopaczek et al.   APPLIED PHYSICS LETTERS

Demonstration of InAsBi photoresponse beyond 3.5 μm

(2014) I. C. Sandall et al.   APPLIED PHYSICS LETTERS

The effect of Bi composition on the properties of InP1−xBix grown by liquid phase epitaxy

(2014) T. D. Das   JOURNAL OF APPLIED PHYSICS

High Bi content GaSbBi alloys

(2014) M. K. Rajpalke et al.   JOURNAL OF APPLIED PHYSICS

Structure and dynamics in liquid bismuth and Bin clusters: A density functional study

(2014) J. Akola et al.   JOURNAL OF CHEMICAL PHYSICS

Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs

(2014) E. Sterzer et al.   JOURNAL OF CRYSTAL GROWTH

Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy

(2014) Z.L. Bushell et al.   JOURNAL OF CRYSTAL GROWTH

Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy

(2014) B. Keen et al.   JOURNAL OF ELECTRONIC MATERIALS

Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi

(2014) I P Marko et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi

(2014) Mingjian Wu et al.   NANOTECHNOLOGY

Localization effects and band gap of GaAsBi alloys

(2014) A. R. Mohmad et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Valence Band Structure ofInAs1-xBixandInSb1-xBixAlloy Semiconductors Calculated Using Valence Band Anticrossing Model

(2014) D. P. Samajdar et al.   TheScientificWorldJOURNAL

InPBi Single Crystals Grown by Molecular Beam Epitaxy

(2014) K. Wang et al.   Scientific Reports

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures

(2014) Daniel F Reyes et al.   Nanoscale Research Letters

Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy

(2014) Yi Gu et al.   Nanoscale Research Letters

Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy

(2013) Lara Dominguez et al.   Applied Physics Express

Photoluminescence Enhancement of InAs(Bi) Quantum Dots by Bi Clustering

(2013) Daniel F. Reyes et al.   Applied Physics Express

Growth and properties of GaSbBi alloys

(2013) M. K. Rajpalke et al.   APPLIED PHYSICS LETTERS

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

(2013) P. Ludewig et al.   APPLIED PHYSICS LETTERS

Temperature dependence of the band gap of GaSb1−xBix alloys with 0 

(2013) J. Kopaczek et al.   APPLIED PHYSICS LETTERS

Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

(2013) G. Vardar et al.   APPLIED PHYSICS LETTERS

Long-wavelength emission in photo-pumped GaAs1−xBix laser with low temperature dependence of lasing wavelength

(2013) Takuma Fuyuki et al.   APPLIED PHYSICS LETTERS

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

(2013) Yi Gu et al.   Chinese Physics B

InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

(2013) Shirong Jin et al.   JOURNAL OF APPLIED PHYSICS

Variation of lattice constant and cluster formation in GaAsBi

(2013) J. Puustinen et al.   JOURNAL OF APPLIED PHYSICS

Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence

(2013) Xiren Chen et al.   JOURNAL OF APPLIED PHYSICS

Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

(2013) S. J. Sweeney et al.   JOURNAL OF APPLIED PHYSICS

Low temperature growth of GaAs1−yBiy epitaxial layers

(2013) Kamran Forghani et al.   JOURNAL OF CRYSTAL GROWTH

Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4×4)α surface

(2013) Isao Murase et al.   JOURNAL OF CRYSTAL GROWTH

Molecular beam epitaxy growth of InSb1−xBix thin films

(2013) Yuxin Song et al.   JOURNAL OF CRYSTAL GROWTH

Surface morphology and Bi incorporation in GaSbBi(As)/GaSb films

(2013) Adam Duzik et al.   JOURNAL OF CRYSTAL GROWTH

Molecular beam epitaxy growth of GaAsBi using As2 and As4

(2013) Robert D. Richards et al.   JOURNAL OF CRYSTAL GROWTH

Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates

(2013) I. Zaied et al.   JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1−xBix/GaAs heterostructures

(2013) Yu I Mazur et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Bismuth alloying properties in GaAs nanowires

(2013) Lu Ding et al.   JOURNAL OF SOLID STATE CHEMISTRY

Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states

(2013) Giorgio Pettinari et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

12-bandk · pmodel for dilute bismide alloys of (In)GaAs derived from supercell calculations

(2013) Christopher A. Broderick et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Modeling Bi-induced changes in the electronic structure of GaAs1−xBixalloys

(2013) Ville Virkkala et al.   PHYSICAL REVIEW B

Unified model of droplet epitaxy for compound semiconductor nanostructures: Experiments and theory

(2013) Kristofer Reyes et al.   PHYSICAL REVIEW B

Impact of alloy disorder on the band structure of compressively strained GaBixAs1−x

(2013) Muhammad Usman et al.   PHYSICAL REVIEW B

Derivation of 12- and 14-bandk·pHamiltonians for dilute bismide and bismide-nitride semiconductors

(2013) Christopher A Broderick et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

(2013) S Mazzucato et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Structure and Optical Properties of InGaAsBi with up to 7% Bismuth

(2012) Jan Devenson et al.   Applied Physics Express

GaAsBi Photoconductive Terahertz Detector Sensitivity at Long Excitation Wavelengths

(2012) Andrius Arlauskas et al.   Applied Physics Express

Effects of rapid thermal annealing on GaAs1-xBix alloys

(2012) A. R. Mohmad et al.   APPLIED PHYSICS LETTERS

Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes

(2012) N. Hossain et al.   APPLIED PHYSICS LETTERS

Bi-induced p-type conductivity in nominally undoped Ga(AsBi)

(2012) G. Pettinari et al.   APPLIED PHYSICS LETTERS

Effects of molecular beam epitaxy growth conditions on composition and optical properties of InxGa1−xBiyAs1−y

(2012) Y. Zhong et al.   APPLIED PHYSICS LETTERS

Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy

(2012) R. B. Lewis et al.   APPLIED PHYSICS LETTERS

Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications

(2012) I. P. Marko et al.   APPLIED PHYSICS LETTERS

Absorption Characteristics of ${\rm GaAs}_{1-x}{\rm Bi}_{x}/{\rm GaAs}$ Diodes in the Near-Infrared

(2012) C. J. Hunter et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

First principles calculations of structural and electronic properties of GaN 1−x Bi x alloys

(2012) M. Mbarki et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Unusual broadening of E0 and E0 + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy

(2012) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice

(2012) Jun Shao et al.   JOURNAL OF APPLIED PHYSICS

Temperature dependence of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys studied by photoreflectance

(2012) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs

(2012) Pernell Dongmo et al.   JOURNAL OF APPLIED PHYSICS

The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

(2012) Z. Batool et al.   JOURNAL OF APPLIED PHYSICS

Quaternary bismide alloy lattice matched to GaAs

(2012) Daniel A. Beaton et al.   JOURNAL OF CRYSTAL GROWTH

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

(2012) Dongsheng Fan et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Molecular beam epitaxy of GaN1-xBix alloys with high bismuth content

(2012) S. V. Novikov et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ab initiostudy of the strain dependent thermodynamics of Bi doping in GaAs

(2012) Heather Jacobsen et al.   PHYSICAL REVIEW B

Band engineering in dilute nitride and bismide semiconductor lasers

(2012) C A Broderick et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Imposing changes of band and spin–orbit gaps in GaNBi

(2012) A. Belabbes et al.   SOLID STATE COMMUNICATIONS

Ab initio investigation of structural and electronic properties of zinc blende AlN1−xBix alloys

(2012) M. Mbarki et al.   SOLID STATE COMMUNICATIONS

Surface structure of bismuth terminated GaAs surfaces grown with molecular beam epitaxy

(2012) Adam Duzik et al.   SURFACE SCIENCE

Photoluminescence investigation of GaAs1−xBix/GaAs heterostructures

(2012) Vaidas Pačebutas et al.   THIN SOLID FILMS

First Principles Study on Electronic Structure and Optical Properties of Ternary GaAs:Bi Alloy

(2012) Lifei Yu et al.   Materials

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm

(2012) Hong Ye et al.   AIP Advances

Shubnikov-de Haas measurement of electron effective mass in GaAs1−xBix

(2011) B. Fluegel et al.   APPLIED PHYSICS LETTERS

The effect of Bi composition to the optical quality of GaAs1−xBix

(2011) A. R. Mohmad et al.   APPLIED PHYSICS LETTERS

Contactless electroreflectance study of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys

(2011) R. Kudrawiec et al.   APPLIED PHYSICS LETTERS

Distribution of bismuth atoms in epitaxial GaAsBi

(2011) D. L. Sales et al.   APPLIED PHYSICS LETTERS

Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material

(2011) J. P. Petropoulos et al.   APPLIED PHYSICS LETTERS

Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

(2011) S.K. Das et al.   INFRARED PHYSICS & TECHNOLOGY

Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM

(2011) F. Bastiman et al.   JOURNAL OF CRYSTAL GROWTH

Surface reconstructions during growth of GaAs1−xBix alloys by molecular beam epitaxy

(2011) M. Masnadi-Shirazi et al.   JOURNAL OF CRYSTAL GROWTH

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

(2011) A.J. Ptak et al.   JOURNAL OF CRYSTAL GROWTH

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

(2011) F. Bastiman et al.   JOURNAL OF CRYSTAL GROWTH

Bismuth in gallium arsenide: Structural and electronic properties of GaAs1−xBix alloys

(2011) Ali Hussain Reshak et al.   JOURNAL OF SOLID STATE CHEMISTRY

Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1−xBix

(2011) R. N. Kini et al.   PHYSICAL REVIEW B

Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

(2011) Muhammad Usman et al.   PHYSICAL REVIEW B

First-principles calculation of the physical properties of GaAs1-xBixalloys

(2011) M Mbarki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBixLaser by Photo-Pumping

(2010) Yoriko Tominaga et al.   Applied Physics Express

GaN1−xBix: Extremely mismatched semiconductor alloys

(2010) A. X. Levander et al.   APPLIED PHYSICS LETTERS

Clustering effects in Ga(AsBi)

(2010) Sebastian Imhof et al.   APPLIED PHYSICS LETTERS

Growth and Characterization of Telecommunication-Wavelength Quantum Dots Using Bi as a Surfactant

(2010) Hiroshi Okamoto et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Temperature dependence of hole mobility in GaAs1−xBix alloys

(2010) D. A. Beaton et al.   JOURNAL OF APPLIED PHYSICS

Origins of Stability in Mixed Bismuth−Indium Clusters

(2010) Ujjwal Gupta et al.   Journal of Physical Chemistry C

Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction

(2010) H. Fitouri et al.   MICROELECTRONIC ENGINEERING

Structural and electronic properties of zinc blend GaAs1−xBix solid solutions

(2010) A. Abdiche et al.   PHYSICA B-CONDENSED MATTER

Evidence of two disorder scales in Ga(AsBi)

(2010) Sebastian Imhof et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Compositional dependence of the exciton reduced mass inGaAs1−xBix(x=0–10%)

(2010) G. Pettinari et al.   PHYSICAL REVIEW B

Formation and vanishing of short range ordering inGaAs1−xBixthin films

(2010) G. Ciatto et al.   PHYSICAL REVIEW B

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

(2010) Hui-Xiong Deng et al.   PHYSICAL REVIEW B

Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

(2010) Z Chine et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Bismuth(III) bromide in organic synthesis. A catalytic method for the allylation of tetrahydrofuranyl and tetrahydropyranyl ethers

(2010) Scott W. Krabbe et al.   TETRAHEDRON LETTERS

Realization of photoreflectance spectroscopy in very-long wave infrared of up to 20 μm

(2009) Jun Shao et al.   APPLIED PHYSICS LETTERS

Composition dependence of photoluminescence of GaAs1−xBix alloys

(2009) Xianfeng Lu et al.   APPLIED PHYSICS LETTERS

Electron delocalization in a non-cyclic all-metal III–V cluster

(2009) Ujjwal Gupta et al.   CHEMICAL PHYSICS LETTERS

Electron Hall mobility in GaAsBi

(2009) R. N. Kini et al.   JOURNAL OF APPLIED PHYSICS

First-principles study of the ground state stability of III–V bismuth compounds

(2009) A. Zaoui et al.   PHILOSOPHICAL MAGAZINE LETTERS

Impurity levels and bandedge electronic structure in as-grown arsenic-doped HgCdTe by infrared photoreflectance spectroscopy

(2009) Jun Shao et al.   PHYSICAL REVIEW B

Evolution of valence-band alignment with nitrogen content in GaNAs∕GaAs single quantum wells

(2008) Jun Shao et al.   APPLIED PHYSICS LETTERS

Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

(2008) X. Lu et al.   APPLIED PHYSICS LETTERS

Structural investigation of GaAs1−xBix/GaAs multiquantum wells

(2008) Yoriko Tominaga et al.   APPLIED PHYSICS LETTERS

Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix

(2008) G. Pettinari et al.   APPLIED PHYSICS LETTERS

Electronic structure of Bi3Gay(-) semiconductor clusters and the special stability of Bi3Ga2- – A gas phase Zintl analogue

(2008) Ujjwal Gupta et al.   CHEMICAL PHYSICS LETTERS

Bismuth alloying in GaAs: a first-principles study

(2008) D. Madouri et al.   COMPUTATIONAL MATERIALS SCIENCE

Growth of GaInNAs and 1.3μm edge emitting lasers by molecular beam epitaxy

(2008) S.M. Wang et al.   JOURNAL OF CRYSTAL GROWTH

light emitting diodes

(2008) R.B. Lewis et al.   JOURNAL OF CRYSTAL GROWTH

Stable Structures and Electronic Properties of the Oriented Bi Nanowires and Nanotubes from First-Principle Calculations

(2008) Jingshan Qi et al.   Journal of Physical Chemistry C

Lattice dynamics study of bismuth III–V compounds

(2008) A Belabbes et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate

(2008) Said Nacer et al.   OPTICAL AND QUANTUM ELECTRONICS

Spatial correlation between Bi atoms in diluteGaAs1−xBix: From random distribution to Bi pairing and clustering

(2008) G. Ciatto et al.   PHYSICAL REVIEW B

Bismuth-stabilized(2×1)and(2×4)reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study

(2008) M. P. J. Punkkinen et al.   PHYSICAL REVIEW B

Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037alloy

(2008) I Moussa et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

First principles study of AlBi

(2008) B. Amrani et al.   SOLID STATE COMMUNICATIONS

Structural and electronic properties of GaAsBi

(2008) H. Achour et al.   SUPERLATTICES AND MICROSTRUCTURES