Observation of compound semiconductors and heterovalent interfaces using aberration-corrected scanning transmission electron microscopy

Evaluation of antimony segregation in InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy

(2016) Jing Lu et al.   JOURNAL OF APPLIED PHYSICS

Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates

(2016) Jing Lu et al.   JOURNAL OF CRYSTAL GROWTH

Bright-field imaging of compound semiconductors using aberration-corrected scanning transmission electron microscopy

(2016) Toshihiro Aoki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells

(2013) Lin Zhou et al.   PHYSICAL REVIEW B

Exploring aberration-corrected electron microscopy for compound semiconductors

(2013) David J. Smith et al.   Microscopy

Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

(2011) E. H. Steenbergen et al.   APPLIED PHYSICS LETTERS

Microstructural characterization of thick ZnTe epilayers grown on GaSb, InAs, InP and GaAs (100) substrates

(2011) Lu Ouyang et al.   JOURNAL OF CRYSTAL GROWTH

Robust atomic resolution imaging of light elements using scanning transmission electron microscopy

(2009) S. D. Findlay et al.   APPLIED PHYSICS LETTERS